Mathematical Modelling and Analysis of Memristors with and without its Temperature Effects

Haritha Ammula, Bhavani Prasad, Kamaraju maddu, Venkata Lakshmi


In this paper the main goal is to study the principle structure and characteristics of single and multiple memristors and also the temperature effects. The complete analysis described here is done by using matlab Simulink. The relationship between the on resistance, off resistance and ionic mobility with respect to temperature has been analyzed and shown graphically.  The memristor can be used as a High speed switch and it can be used in non volatile computer memories due to its higher switching speeds.

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L. O. Chua, “Memristor-the missing circuit element,” IEEE Trans.Circuit Theory, vol. CT-18, no. 5, pp. 507-519, Sep. 1971.

Williams, R. S. “How we found the missing memristor”. IEEE Spectr., vol. 45, pp. 28 – 35, 2008.

D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The

Missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008.

Pazienza, G. E., J. Albo-Canals. “Teaching Memristors to EE Undergraduate Students”. IEEE Circuits and Systems Magazine, pp. 36- 44, 22 November 2011.

Valeri M. Mladenov, Stoyan M. Kirilov, “Analysis of a serial circuit with two Memristors and voltage source at sine and impulse regime”, Technical University of Sofia, Bulgaria.

Valeri M. Mladenov, Stoyan M. Kirilov, “Analysis of temperature influence on titanium dioxide memristor characteristics at pulse mode”, Technical University of Sofia, Bulgaria.


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