Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT

Amarnath Gaini, Trupti Ranjan Lenka


We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantum-well with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field.  By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development.  The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxide-semiconductor high electron mobility transistor devices also with modifications in related physical values.

Full Text:



. K. Jena, R. Swain, and T. R. Lenka, “Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT: Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 30, no. 1, p. e2117, Jan. 2017.

. Y. Yue et al., “InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 988–990, Jul. 2012.

. H. Zhou et al., “High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric,” IEEE Electron Device Letters, vol. 37, no. 5, pp. 556–559, May 2016.

. S. Yagi et al., “High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator,” Solid-State Electronics, vol. 50, no. 6, pp. 1057–1061, Jun. 2006.

. F. Husna, M. Lachab, M. Sultana, V. Adivarahan, Q. Fareed, and A. Khan, “High-Temperature Performance of AlGaN/GaN MOSHEMT With SiO2 Gate Insulator Fabricated on Si (111) Substrate,” IEEE Transactions on Electron Devices, vol. 59, no. 9, pp. 2424–2429, Sep. 2012.

. Y. Yue et al., “Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz,” Japanese Journal of Applied Physics, vol. 52, no. 8S, p. 08JN14, Aug. 2013.

. R. Swain, J. Panda, K. Jena, and T. R. Lenka, “Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT,” Journal of Computational Electronics, vol. 14, no. 3, pp. 754–761, Sep. 2015.

. Q. Feng, Q. Li, T. Xing, Q. Wang, J.-C. Zhang, and Y. Hao, “Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors,” Chinese Physics B, vol. 21, no. 6, p. 67305, Jun. 2012.

. X.-Y. Liu et al., “AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique,” Nanoscale Research Letters, vol. 10, no. 1, Dec. 2015.

. Shu Yang et al., “AlGaN/GaN MISHEMTs With High-k LaLuO3 Gate Dielectric,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 979–981, Jul. 2012.

. J. Zhang, B. Syamal, X. Zhou, S. Arulkumaran, and G. I. Ng, “A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression,” IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 314–323, Feb. 2014.

. W. Deng, J. Huang, X. Ma, J. J. Liou, and F. Yu, “A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands,” Solid-State Electronics, vol. 115, pp. 54–59, Jan. 2016.

. S. Khandelwal and T. A. Fjeldly, “A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices,” Solid-State Electronics, vol. 76, pp. 60–66, Oct. 2012.

. User Guide Manual, ATLAS, Version 5.12.0.R./USA, Silvaco Inc, 2010.

. M. Tapajna, J. Kuzmík, “A Comprehensive Analytical Model for Threshold Voltage Calculation in GaN Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors,” Applied Physics Letters, vol. 100, pp. 1135091-4, 2012.

. J. Wang et al., “Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures,” Scientific Reports, vol. 4, p. 6521, Oct. 2014.


  • There are currently no refbacks.

International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences

eISSN: 2300-1933