Influence of thermal phenomena on dc characteristics of the IGBT

Krzysztof Górecki, Paweł Górecki


The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The used measurement set-ups and the results of measurements of dc characteristics of the selected transistor obtained under different cooling conditions are presented. The influence of the ambient temperature and the applied cooling system on the shape of these characteristics is discussed. In particular, attention has been paid to the untypical shape of non-isothermal characteristics of this element in the sub-threshold range.

Full Text:



R. Ericson and D. Maksimovic, Fundamentals of Power Electronics, Norwell, Kluwer Academic Publisher, 2001.

M.H. Rashid, Power Electronic Handbook, Academic Press, Elsevier, 2007.

M.K. Kazimierczuk, Pulse-width Modulated DC-DC Power Converters, John Wiley &Sons, Ltd, 2008

Baliga B.J, “Analytical Modelling of IGBTs: Challenges and Solutions”, IEEE Transactions on Electron Devices, Vol. 60, No. 2, 2013, pp. 535-543.

J. Singh: Semiconductor Devices. Basic Principles, John Wiley & Sons, 2001.

P.A. Mawby, P.M. Igic and M.S. Towers, “Physically based compact device models for circuit modelling applications”, Microelectronics Journal, Vol. 32, No. 5-6, 2001, pp. 433-447.

Ł. Starzak, M. Zubert, M. Janicki, T. Torzewicz, M. Napieralska, G. Jabloński and A. Napieralski, “Behavioral approach to SiC MPS diode electrothermal model generation”, IEEE Transactions on Electron Devices, Vol. 60, No. 2, 2013, pp. 630-638.

J. Zarębski and K. Górecki, “The electrothermal large-signal model of power MOS transistors for SPICE”, IEEE Transactions on Power Electronics, Vol. 25 , No. 5-6, 2010, pp. 1265 – 1274.

K. Sheng, B.W. Williams and S.J. Finney, “A review of IGBT models”, IEEE Transactions of Power Electronics, Vol. 15, No. 6, 2000, pp. 1250-1266.

Z. Wang, W. Qiao, B. Tian and L. Qu, “An effective heat propagation path-based online adaptive thermal model for IGBT modules”, 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014, Fort Worth, 2014, pp. 513-518.

K. Górecki, J. Zarębski and D. Bisewski: “An influence of the selected factors on the transient thermal impedance model of power MOSFET”, Informacije MIDEM – Journal of Microelectronics, Electronic Components and Materials, Vol. 45, No. 2, 2015, pp. 110-116.

Spice Models and Saber Models. Web-site of International Rectifier,

A. Poppe, “Multi-domain compact modelling of LEDs, An overview of models and experimental data”, Microelectronics Journal, Vol. 46, No. 12, 2015, pp. 1138-1151.

K. Górecki and P. Górecki, “Modelling the influence of self-heating on characteristics of IGBTs”, Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits & Systems, MIXDES 2014, Lublin, 2014, pp. 298-302.

J. Zarębski and K. Górecki, “SPICE-aided modelling of dc characteristics of power bipolar transistors with selfheating taken in account”, International Journal of Numerical Modelling Electronic Networks, Devices and Fields, Vol. 22, No. 6, pp. 422-433, 2009.

J. Yeon, Introduction of New Generation Field-Stop Shorted-Anode IGBT, Digi-Key Electronics, 2014.

A. Sattar, “Insulated Gate Bipolar Transistor (IGBT) Basics”. IXYS Corporation, Application Note IXAN0063.

A.J. Forsyth, S.Y. Yang, P.A. Mawby and P. Igic, “Measurement and modelling of power electronic devices at cryogenic temperatures”, IEE Proceedings - Circuits, Devices and Systems, Vol. 153, No. 5, pp. 407 – 415, 2006.

G. Busatto, C. Abbate, B. Abbate and F. Iannuzzo, “IGBT modules robustness during turn-off commutation”, Microelectronics Reliability, Vol. 48, No. 8–9, pp. 1435-1439, 2008.

IRG4PC40UD Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode, Data sheet, International Rectifier, 1997.

K. Górecki and P. Górecki, “The Analysis of Accuracy of Selected Methods of Measuring the Thermal Resistance of IGBTs”, Metrology and Measurement Systems, Vol. 22, No. 3, pp. 455-464, 2015.

Series 2600 system sourcemeter User’s manual, Keithley Instruments, Inc., 2006,

A.R. Hefner and D.M. Diebolt, “An Experimentaly Verified IGBT Model Implemented in the Saber Circuit Simulator”, IEEE Transactions on Power Electronics, Vol. 9, No. 5, pp. 532-542, 1994.

A. Castellazzi, Y.C. Gerstenmaier, R. Kraus and G.K.M. Wachutka, “Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet”, IEEE Transactions on Power Electronics, Vol. 21, No. 3, pp. 603-612, 2006.


  • There are currently no refbacks.

International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences

eISSN: 2300-1933