MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications

Mikolaj Badura

Abstract


Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.

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References


C. Gmachl, F. Capasso, D.L. Sivco, A.Y. Cho, Recent progress in quantum cascade lasers and applications, Rep. Prog. Phys. 64 (2001) 1533–1601. doi:10.1088/0034-4885/64/11/204.

J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson, A.Y. Cho, Quantum Cascade Laser, Science (80-. ). 264 (1994) 553–556. doi:10.1126/science.264.5158.553.

M. Bugajski et al., Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green’s function modeling of electro-optical characteristics, Phys. Status Solidi. 251 (2014) 1144–1157. doi:10.1002/pssb.201350322.

J. Jaramillo-Fernandez, E. Chavez-Angel, R. Sanatinia, H. Kataria, S. Anand, S. Lourdudoss, C.M. Sotomayor-Torres, Thermal conductivity of epitaxially grown InP: experiment and simulation, CrystEngComm. 19 (2017) 1879–1887. doi:10.1039/C6CE02642G.

K.K. Ng, Complete Guide to Semiconductor Devices, John Wiley & Sons, Inc., Hoboken, NJ, USA, 2009. doi:10.1002/9781118014769.

S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, John Wiley & Sons, Inc., Hoboken, NJ, USA, 2006. doi:10.1002/0470068329.

T. Takanohashi, K. Nakai, K. Nakajima, SIMS and DLTS measurements on Fe-doped InP epitaxial layers grown by MOCVD, Jpn. J. Appl. Phys. 27 (1988) L113–L115. doi:10.1143/JJAP.27.L113.


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