Offset Drift Dependence of Hall Cells with their Designed Geometry

Maria-Alexandra Paun, Jean-Michel Sallese, Maher Kayal


In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters such as individual, residual offset and resistance has been also investigated. Therefore the optimum cell to fit the best in the performance specifications was identified. The variety of tested shapes ensures a good analysis on how the sensors performance changes with geometry.

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