Offset Drift Dependence of Hall Cells with their Designed Geometry
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E. Ramsden, Hall-Effect Sensors - Theory and Applications, 2nd ed. Elsevier, 2006.
S.-Y. Kim, C. Choi, K. Lee, and W. Lee, “An improved rotor position estimation with vector-tracking observer in PMSM drives with lowresolution Hall-effect sensors,” IEEE Transactions on Industrial Electronics, vol. 58, no. 9, pp. 4078-4086, 2011.
M. A. Paun, J. M. Sallese, and M. Kayal, “Geometry influence on Hall effect devices performance,” U.P.B. Sci. Bull., vol. 72, no. 4, pp. 257-271, 2010.
M. A. Paun, J. M. Sallese, and M. Kayal, “Hall effect sensors performance investigation using threedimensional simulations,” P. of the 18th International Conference, Ed. Mixed Design of Integrated Circuits and Systems (MIXDES), 2011, pp. 450-455.
M. A. Paun, J. M. Sallese, and M. Kayal, “Comparative study on the performance of five different Hall effect devices,” Sensors, vol. 13, no. 2, pp. 2093-2112, 2013.
M. A. Paun, J. M. Sallese, and M. Kayal, “Geometrical parameters influence on the Hall effect sensors offset and drift,” in 7th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2011, pp. 145-148.
R.S. Popovic, Hall Effect Devices, 2nd ed. Institute of Physics Publising, 2004.
Y.Hu and W.-R. Yang, “CMOS hall sensor using dynamic quadrature offset cancellation,” in Solid-State and Integrated Circuit Technology, 2006, ICSICT ’06. 8th International Conference on, 2006, pp. 284-286.
M. A. Paun, J. M. Sallese, and M. Kayal, “Hall effect sensors design, integration and behaviour analysis,” Journal of Sensors and Actuator Networks, vol. 2, no. 1, pp. 85-97, 2013.
H. Blanchard, C. D. Iseli, and R. S. Popovic, “Compensation of the the temperature-dependent offset drift of a Hall sensor,” SENSORS AND ACTUATORS A-PHYSICAL, vol. 60, no. 1-3, pp. 10-13, 1997.
H. Blanchard, F. De Montmollin, and J. Hubin, “Highly sensitive Hall sensor in CMOS technology,” SENSORS AND ACTUATORS APHYSICAL, vol. 82, no. 1-3, pp. 144-148, 2000.
“Synopsys TCAD tools,” 2013. [Online]. Available: http://www.synopsys.com/Tools/TCAD
S. M. Sze and K. K. Ng, Physics of semiconductor devices, 3rd ed. John Wiley and Sons, 2007.
I. S. Selberherr, Analysis and Simulation of Semiconductor Device. Springer-Verlag, 1984.
W. Allegretto, A. Nathan, and H. Baltes, Numerical Analysis of Magnetic-Field-Sensitive Bipolar Devices. IEEE Transactions On Computer-Aided Design, 1991, vol. 10, no. 4.
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