AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
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W. Shockley and H. J. Queissery, “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells,” J. Appl. Phys., vol. 32, pp. 510–519, 1961.
G. Conibeer, “Third-generation photovoltaics,” Materials Today, vol.
, pp. 42-50, 2007.
S. P. Philipps et al., “Present Status in the Development of III-
V Multi-Junction Solar Cells,” in Next Generation of Photovoltaics,
A. Cristobal, A. Marti Vega, L. Luque (eds), Springer Series in Optical Sciences, Vol. 165, pp. 1-22, 2012.
C. B. Honsberg, S. P. Bremner and R. Corkish, “Design trade-offs and rules for multiple energy level solar cells,” Physica E: Low-dimensional Systems and Nanostructures, vol. 14, pp. 136-141, 2007.
T. Trupke, M. A. Green and P. W¨urfel., “ Improving solar cell
efficiencies by down-conversion of high-energy photons,” J. Appl. Phys., vol. 92, pp. 1668-1674, 2002.
H.-Q. Wang et al., “ Rare-Earth Ion Doped Up-Conversion Materials for Photovoltaic Applications,” Advanced Materials, vol. 23, pp. 2675-2680, 2011.
H. A. Atwater and A. Polman, “Plasmonics for improved photovoltaic devices,” Nature Materials, vol. 9, pp. 205-213, 2002.
R. T. Ross and A. Nozik, “Efficiency of hot-carrier solar energy
converters,” J. Appl. Phys., vol. 53, pp. 3813-3818, 1982.
M. Weyers, M. Sato and H. Ando, “Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers,” Jpn. J. Appl. Phys, vol. 31(7A), pp. L853-L855, 1992.
M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y.
Yazawa, “GaInNAs: A Novel Material for Long-Wavelength-Range
Laser Diodes with Excellent High-Temperature Performance,” Jpn. J. Appl. Phys, vol. 35, pp. 1273-1275, 1996.
B. Ściana et al., “Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications,” Proceedings of SPIE, vol. 8902, pp. 89020J-1 - 89020J-8, 2013.
B. Ściana et al., “MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications,” Cryst. Res. Technol., vol. 47, pp. 313-320, 2012.
D. Radziewicz et al., “Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application,” ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems, pp. 123-126, 2012.
“PN4300PC Electrochemical C-V Profiler with Photovoltage Spec-
troscopy,” Operating Manual, Accent Semiconductor Technologies Inc. issue 2, September 2000.
F. H. Pollack and H. Shen, “Photoreflectance characterization of semiconductors and semiconductor heterostructures,” Journal of Electronic Materials, vol. 19, pp. 399-406, 1990.
J. Misiewicz, P. Sitarek, G. Sek and R. Kudrawiec, “Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy,” Materials Science- Poland, vol. 21, pp. 263-320, 2003.
E. Canovas et al., “Photoreflectance analysis of a GaInP/GaInAs/Ge multijunction solar cell ,” Appl. Phys. Lett., vol. 97, pp. 203504(1)-203504(3), 2010.
J. Gray, “The Physics of the Solar Cell,” in Handbook of Photovoltaic Science and Engineering, Second Edition, A. Luque and S. Hegedus (eds), John Wiley & Sons, pp. 82-129, 2011.
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