2024-03-28T21:45:12Z
http://ijet.pl/index.php/ijet/oai
oai:ojs.ijet.ise.pw.edu.pl:article/3018
2020-11-22T18:22:53Z
ijet:TECHNOLOGY
"201122 2020 eng "
2300-1933
dc
Low cost design methods to enhance resolution and dimensions for printed electrodes
Tarapata, Grzegorz
Warsaw University of Technology, Faculty of Electronics
and Information Technology, Institute of Electronic Systems http://orcid.org/0000-0001-7055-4031
Marzęcki, Michał
Warsaw University of Technology, Faculty of Electronics
and Information Technology, Institute of Telecommunications http://orcid.org/0000-0002-8526-7622
In the paper, we demonstrate the feasibility of fabrication interdigitated electrodes with the usage of inkjet printing technology. The emphasis was put to obtain better shape quality and lower spacing between electrodes with respect to the typical printing process. The paper presents an analysis of the main factors that have an influence on the dimension and quality of printed structures and proposes methods that allow eliminating the main problems. The first proposed method is based on controlling the time between patterning successive drops. While the second method is based on changing the design methods and printing orientation. Both methods do not require any additional technological processes or the use of any special surface preparation methods. Finally, the obtained results and conclusions were presented and discussed.
Electronics and Telecommunications Committee
2020-11-22 19:06:03
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.24425-ijet.2020.135205
International Journal of Electronics and Telecommunications; Vol 66, No 4 (2020)
eng
http://ijet.pl/index.php/ijet/article/download/3018/8832
http://ijet.pl/index.php/ijet/article/download/3018/8844
Copyright (c) 2020 International Journal of Electronics and Telecommunications
oai:ojs.ijet.ise.pw.edu.pl:article/396
2016-06-20T10:16:45Z
ijet:TECHNOLOGY
"160620 2016 eng "
2300-1933
dc
Determination of the material relative permittivity in the UHF band by using T and modified ring resonators
Jankowski-Mihułowicz, Piotr
Rzeszow University of Technology,
Faculty of Electrical and Computer Engineering, Department of Electronic and Communication Systems http://pjanko.sd.prz.edu.pl
Lichoń, Wojciech
Rzeszow University of Technology,
Faculty of Electrical and Computer Engineering, Department of Electronic and Communication Systems
Pitera, Grzegorz
Rzeszow University of Technology,
Faculty of Electrical and Computer Engineering, Department of Electronic and Communication Systems
Węglarski, Mariusz
Rzeszow University of Technology,
Faculty of Electrical and Computer Engineering, Department of Electronic and Communication Systems http://wmar.sd.prz.edu.pl
electrical engineering; telecommunications engineering
The complete methodology of designing T- and modified ring resonators in the UHF band are presented in the paper. On the basis of proposed algorithms, the dedicated software tool has been elaborated in order to determine material parameters of contemporary substrates. The program is implemented in the Mathcad environment and it includes the base of information on known materials used in electronic products. Also, test sample series for selected substrate materials (IS680, FR408, I-SPEED PCB ISOLA and A6-S LTCC FERRO) and operating frequencies from 1 GHz to 3 GHz are analyzed in details. The special test stand with a vector network analyzer has been applied in experiments. The obtained data of relative permittivity measurements and model calculations are described, discussed and concluded.
Electronics and Telecommunications Committee
2016-06-20 12:08:00
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.1515-eletel-2016-0017
International Journal of Electronics and Telecommunications; Vol 62, No 2 (2016)
eng
http://ijet.pl/index.php/ijet/article/download/396/1241
http://ijet.pl/index.php/ijet/article/download/396/1659
http://ijet.pl/index.php/ijet/article/download/396/1661
Copyright (c) 2016 International Journal of Electronics and Telecommunications
oai:ojs.ijet.ise.pw.edu.pl:article/507
2016-06-20T10:16:45Z
ijet:TECHNOLOGY
"160620 2016 eng "
2300-1933
dc
The Influence of Sintering Conditions on the Inkjet Printed Paths Resistance
Tomaszewski, Grzegorz
Rzeszów University of Technology
Wałach, Tadeusz
Rzeszów University of Technology
Potencki, Jerzy
Rzeszów University of Technology
Pilecki, Mariusz
Rzeszów University of Technology
inkjet printing; printed electronics; flexible electronics; sintering
The sintering of elements performed with the inkjet printing technique is one of the stages of flexible printed circuit manufacturing process. It is a crucial factor to determining the printed paths conductivity playing often an important role in the printed circuit. In this paper the study of the influence of thermal sintering conditions (temperature, time) on the resistance of paths made with inkjet printing on flexible substrates by using two electrically conductive inks was presented. The results of the investigations show that the sintering temperature is the main factor determining the paths resistance. Therefore, in some applications the sintering temperature higher than the one specified by the ink manufacturer can be used to decrease the paths resistance and to improve some circuit parameters. However, it should be noticed that the effective resistance decrease occurs only up to a certain temperature due to the appearance cracks in the printed paths.
Electronics and Telecommunications Committee
2016-06-20 12:08:00
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.1515-eletel-2016-0018
International Journal of Electronics and Telecommunications; Vol 62, No 2 (2016)
eng
http://ijet.pl/index.php/ijet/article/download/507/1672
http://ijet.pl/index.php/ijet/article/download/507/1708
Copyright (c) 2016 International Journal of Electronics and Telecommunications
oai:ojs.ijet.ise.pw.edu.pl:article/2629
2021-01-31T00:11:06Z
ijet:TECHNOLOGY
"210131 2021 eng "
2300-1933
dc
Developing the system of collecting, storing and processing information from solar collectors
Kozbakova, Ainur
Institute of Information and Computational Technologies CS MES RK http://orcid.org/0000-0002-5213-4882
Wojcik, Waldemar
Yedilhan Amirgaliyev, Yedilkhan
solar collector, master controller, ESP-WROOM-32, monitoring
В данной статье представлена новая методика управления системой сбора, хранения и обработки информации от солнечных коллекторов, которая может применяться для обогрева промышленных и бытовых отсеков для горячего водоснабжения. Наиболее выгодное использование солнечных коллекторов в промышленности - замена помех от человека сетями беспроводных датчиков. Стандартная система солнечного коллектора потребляет в среднем 30% тепла из-за плохого управления и конфигурации. Наша система контроля и управления позволяет повысить производительность обогрева производственных и бытовых помещений с помощью солнечного коллектора для горячего водоснабжения.
Electronics and Telecommunications Committee
2021-01-31 00:33:21
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.24425-ijet.2021.135945
International Journal of Electronics and Telecommunications; Vol 67, No 1 (2021)
eng
http://ijet.pl/index.php/ijet/article/download/2629/0
http://ijet.pl/index.php/ijet/article/download/2629/0
http://ijet.pl/index.php/ijet/article/download/2629/7739
http://ijet.pl/index.php/ijet/article/download/2629/7740
Copyright (c) 2021 International Journal of Electronics and Telecommunications
oai:ojs.ijet.ise.pw.edu.pl:article/75
2014-07-01T15:57:54Z
ijet:TECHNOLOGY
"140630 2014 eng "
2300-1933
dc
AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
Dawidowski, Wojciech
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Ściana, Beata
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Zborowska-Lindert, Iwona
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Mikolášek, Miroslav
Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Latkowska, Magdalena
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50- 370, Poland
Radziewicz, Damian
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Pucicki, Damian
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Bielak, Katarzyna
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Badura, Mikołaj
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
Kováč, Jaroslav
Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Tłaczała, Marek
Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego
11/17, 50- 372 Wrocław, Poland
microelectronics; optoelectronics; epitaxy
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
Electronics and Telecommunications Committee
2014-06-30 21:46:58
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.2478-eletel-2014-0018
International Journal of Electronics and Telecommunications; Vol 60, No 2 (2014)
eng
Copyright (c)
oai:ojs.ijet.ise.pw.edu.pl:article/3000
2020-11-22T18:22:53Z
ijet:TECHNOLOGY
"201122 2020 eng "
2300-1933
dc
Analysis of the magnetoelectric sensor's usability for the energy harvesting
Bilski, Piotr
Warsaw University of Technology, Poland
Bilski, Adrian
University of Social Sciences in Lodz
Kuczynski, Karol
Kazimierz Pulaski University of Technology and Humanities in Radom
Szymanski, Jerzy
Kazimierz Pulaski University of Technology and Humanities in Radom
magnetoelectric sensor, current sensor, magnetostriction, amorphous metal ribbon, piezoelectric materials, energy harvesting
The paper presents the analysis of the magnetic sensor’s applicability to the energy harvesting operations. The general scheme and technical advancement of the energy extraction from the electric vehicle (such as a tram or a train) is presented. The proposed methodology of applying the magnetic sensor to the energy harvesting is provided. The experimental scheme for the sensor characteristics and measurement results is discussed. Conclusions and future prospects regarding the practical implementation of the energy harvesting system are provided.
Electronics and Telecommunications Committee
2020-11-22 19:06:03
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.24425-iijet.2020.135193
International Journal of Electronics and Telecommunications; Vol 66, No 4 (2020)
eng
http://ijet.pl/index.php/ijet/article/download/3000/8780
http://ijet.pl/index.php/ijet/article/download/3000/8782
Copyright (c) 2020 International Journal of Electronics and Telecommunications
oai:ojs.ijet.ise.pw.edu.pl:article/149
2015-03-10T23:31:30Z
ijet:TECHNOLOGY
"141207 2014 eng "
2300-1933
dc
Computer Controlled System for the Magnetron Sputtering Deposition of the Metallic Multilayers
Stępień, Jacek
AGH University of Science and Tedchnology
Marszałek, Konstanty
AGH University of Science and Tedchnology
Mania, Ryszard
AGH University of Science and Tedchnology
Electronics
Deposition of the metallic multilayers is a part
of the scientific program on the chemical reaction leading to
intermetallic compound formation. This reaction is known as self
propagation high temperature synthesis (SHS). The key problem
in this investigation is to produce the metallic multilayer system
with good repeatability of thin films thicknesses. Thin should
be thin, parallel and with low volume of intermixing region
between components. Computer control system for the pulsed
(mid frequency MF) magnetron sputtering equipment dedicated
for metallic multilayers deposition is presented in this paper. The
rotation velocity of the sample holder and the gas inlet through
membrane valves are the main parameters controlled by the
system. Parameters of the magnetron gun power supply, sample
temperature and technological gas pressure are registered. The
process cards which define all process parameters are collected
for each dedicated process type. All cards are collected in a
process cards library which permits for full automatization of
all operations. Software was written in a graphical LabVIEW
environment.
Electronics and Telecommunications Committee
2014-12-22 17:48:32
application/pdf
http://ijet.pl/index.php/ijet/article/view/10.2478-eletel-2014-0038
International Journal of Electronics and Telecommunications; Vol 60, No 4 (2014)
eng
Copyright (c)