Billel, Smaani, Ingénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes Laboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, Algeria
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Vol 67, No 4 (2021) - Microelectronics, nanoelectronics
Double-gate MOSFET model implemented in VerilogAMS language for the transient simulation and the configuration of ultra low-power analog circuits
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International Journal of Electronics and Telecommunications
is a periodical of Electronics and Telecommunications Committee
of Polish Academy of Sciences
eISSN: 2300-1933