Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT
Abstract
We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantum-well with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field. By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development. The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxide-semiconductor high electron mobility transistor devices also with modifications in related physical values.
References
. K. Jena, R. Swain, and T. R. Lenka, “Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT: Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 30, no. 1, p. e2117, Jan. 2017.
. Y. Yue et al., “InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 988–990, Jul. 2012.
. H. Zhou et al., “High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric,” IEEE Electron Device Letters, vol. 37, no. 5, pp. 556–559, May 2016.
. S. Yagi et al., “High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator,” Solid-State Electronics, vol. 50, no. 6, pp. 1057–1061, Jun. 2006.
. F. Husna, M. Lachab, M. Sultana, V. Adivarahan, Q. Fareed, and A. Khan, “High-Temperature Performance of AlGaN/GaN MOSHEMT With SiO2 Gate Insulator Fabricated on Si (111) Substrate,” IEEE Transactions on Electron Devices, vol. 59, no. 9, pp. 2424–2429, Sep. 2012.
. Y. Yue et al., “Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz,” Japanese Journal of Applied Physics, vol. 52, no. 8S, p. 08JN14, Aug. 2013.
. R. Swain, J. Panda, K. Jena, and T. R. Lenka, “Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT,” Journal of Computational Electronics, vol. 14, no. 3, pp. 754–761, Sep. 2015.
. Q. Feng, Q. Li, T. Xing, Q. Wang, J.-C. Zhang, and Y. Hao, “Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors,” Chinese Physics B, vol. 21, no. 6, p. 67305, Jun. 2012.
. X.-Y. Liu et al., “AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique,” Nanoscale Research Letters, vol. 10, no. 1, Dec. 2015.
. Shu Yang et al., “AlGaN/GaN MISHEMTs With High-k LaLuO3 Gate Dielectric,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 979–981, Jul. 2012.
. J. Zhang, B. Syamal, X. Zhou, S. Arulkumaran, and G. I. Ng, “A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression,” IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 314–323, Feb. 2014.
. W. Deng, J. Huang, X. Ma, J. J. Liou, and F. Yu, “A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands,” Solid-State Electronics, vol. 115, pp. 54–59, Jan. 2016.
. S. Khandelwal and T. A. Fjeldly, “A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices,” Solid-State Electronics, vol. 76, pp. 60–66, Oct. 2012.
. User Guide Manual, ATLAS, Version 5.12.0.R./USA, Silvaco Inc, 2010.
. M. Tapajna, J. Kuzmík, “A Comprehensive Analytical Model for Threshold Voltage Calculation in GaN Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors,” Applied Physics Letters, vol. 100, pp. 1135091-4, 2012.
. J. Wang et al., “Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures,” Scientific Reports, vol. 4, p. 6521, Oct. 2014.
Downloads
Published
Issue
Section
License
Copyright (c) 2017 International Journal of Electronics and Telecommunications
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
1. License
The non-commercial use of the article will be governed by the Creative Commons Attribution license as currently displayed on https://creativecommons.org/licenses/by/4.0/.
2. Author’s Warranties
The author warrants that the article is original, written by stated author/s, has not been published before, contains no unlawful statements, does not infringe the rights of others, is subject to copyright that is vested exclusively in the author and free of any third party rights, and that any necessary written permissions to quote from other sources have been obtained by the author/s. The undersigned also warrants that the manuscript (or its essential substance) has not been published other than as an abstract or doctorate thesis and has not been submitted for consideration elsewhere, for print, electronic or digital publication.
3. User Rights
Under the Creative Commons Attribution license, the author(s) and users are free to share (copy, distribute and transmit the contribution) under the following conditions: 1. they must attribute the contribution in the manner specified by the author or licensor, 2. they may alter, transform, or build upon this work, 3. they may use this contribution for commercial purposes.
4. Rights of Authors
Authors retain the following rights:
- copyright, and other proprietary rights relating to the article, such as patent rights,
- the right to use the substance of the article in own future works, including lectures and books,
- the right to reproduce the article for own purposes, provided the copies are not offered for sale,
- the right to self-archive the article
- the right to supervision over the integrity of the content of the work and its fair use.
5. Co-Authorship
If the article was prepared jointly with other authors, the signatory of this form warrants that he/she has been authorized by all co-authors to sign this agreement on their behalf, and agrees to inform his/her co-authors of the terms of this agreement.
6. Termination
This agreement can be terminated by the author or the Journal Owner upon two months’ notice where the other party has materially breached this agreement and failed to remedy such breach within a month of being given the terminating party’s notice requesting such breach to be remedied. No breach or violation of this agreement will cause this agreement or any license granted in it to terminate automatically or affect the definition of the Journal Owner. The author and the Journal Owner may agree to terminate this agreement at any time. This agreement or any license granted in it cannot be terminated otherwise than in accordance with this section 6. This License shall remain in effect throughout the term of copyright in the Work and may not be revoked without the express written consent of both parties.
7. Royalties
This agreement entitles the author to no royalties or other fees. To such extent as legally permissible, the author waives his or her right to collect royalties relative to the article in respect of any use of the article by the Journal Owner or its sublicensee.
8. Miscellaneous
The Journal Owner will publish the article (or have it published) in the Journal if the article’s editorial process is successfully completed and the Journal Owner or its sublicensee has become obligated to have the article published. Where such obligation depends on the payment of a fee, it shall not be deemed to exist until such time as that fee is paid. The Journal Owner may conform the article to a style of punctuation, spelling, capitalization and usage that it deems appropriate. The Journal Owner will be allowed to sublicense the rights that are licensed to it under this agreement. This agreement will be governed by the laws of Poland.
By signing this License, Author(s) warrant(s) that they have the full power to enter into this agreement. This License shall remain in effect throughout the term of copyright in the Work and may not be revoked without the express written consent of both parties.
