The behavioural model of graphene field-effect transistor
Abstract
The behavioural model of a graphene field-effect
transistor (GFET) is proposed. In this approach the GFET
element is treated as a “black box” with only external terminals
available and without considering the physical phenomena
directly. The presented circuit model was constructed to reflect
steady-states characteristics taking also into account GFET
capacitances. The authors’ model is defined by a relatively small
number of equations which are not nested and all the parameters
can be easily extracted. It was demonstrated that the proposed
model allows to simulate the steady-state characteristics with the
accuracy approximately as high as in the case of the physical
model. The presented compact GFET model can be used for
circuit or system-level simulations in the future.
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