TiAl-based Ohmic Contacts to p-type 4H-SiC

Authors

  • Agnieszka Martychowiec Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland
  • Norbert Kwietniewski Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland
  • Kinga Kondracka Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland
  • Aleksander Werbowy Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland
  • Mariusz Sochacki Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland

Abstract

This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.

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Published

2024-04-19

Issue

Vol. 67 No. 3 (2021)

Section

Microelectronics, nanoelectronics

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