Small-Signal Model of RF InAlGaN/GaN HEMT and On-Chip Calibration Structures
Abstract
The advanced GaN-based devices utilized for high-performance radio frequency (RF) applications are intensively studied to be used as RF sensors or amplifiers. The paper is focused on microwave characterization of two port passive devices, especially on-chip calibration structures and InAlGaN/GaN electron mobility transistor (HEMT) operating in the cold bias region (zero applied voltage). The acquired S-parameters are inputs to build a passive device small-signal model consisting of three star-connected impedances. The calculated Z-parameters are possible to be utilized for on-chip signal paths design. The parameters to be calculated are assumed frequency independent, however, more proper HEMT modelling requires non-zero voltage application, therefore, the model possibilities are depicted and discussed.
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