I–V Characteristics of ISFET Devices in Iron(II) Fumarate Solutions

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Abstract

This work presents the fabrication process and I–V characteristics of ISFET devices with an open gate. Measurements were performed in deionized water and in deionized water solutions containing iron(II) fumarate at various concentrations. Changes in the electrical parameters of the transistors were analyzed as a function of electrolyte composition, with particular emphasis on the influence of Fe2+ ions and fumarate anions. The study aimed to assess the sensitivity and stability of ISFET devices in a complex ionic environment.

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Published

2026-05-16

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Section

Sensors, Microsystems, MEMS, MOEMS