AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Authors

  • Wojciech Dawidowski Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Beata Ściana Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Iwona Zborowska-Lindert Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Miroslav Mikolášek Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
  • Magdalena Latkowska Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50- 370, Poland
  • Damian Radziewicz Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Damian Pucicki Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Katarzyna Bielak Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Mikołaj Badura Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland
  • Jaroslav Kováč Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
  • Marek Tłaczała Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50- 372 Wrocław, Poland

Abstract

Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

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Published

2014-06-30

Issue

Vol. 60 No. 2 (2014)

Section

Technologies and Materials

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