DTMOS Based Bandgap Reference Design in CMOS 28nm Process
Abstract
This paper describes design and simulation results of the bandgap reference source in CMOS 28nm technology. Proposed bandgap reference utilizes DTMOS transistors for providing currents of negative and positive temperature coefficients and is equipped with various techniques for process variation minimization such as common centroid element design and user controlled trimming resistors. This circuit achieves temperature coefficient equal to -18.87 ppm/(°C) with temperature ranging from -20°C to 100°C at 1V power supply, occupies 0.38 mm2 of silicon area, and consumes 3.66 µW of power.
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